DocumentCode :
4262
Title :
FALPEM: Framework for Architectural-Level Power Estimation and Optimization for Large Memory Sub-Systems
Author :
Chhabra, Amit ; Rawat, Harsh ; Jain, Mohit ; Tessier, Pascal ; Pierredon, Daniel ; Bergher, Laurent ; Kumar, Promod
Author_Institution :
STMicroelectron., Greater Noida, India
Volume :
34
Issue :
7
fYear :
2015
fDate :
Jul-15
Firstpage :
1138
Lastpage :
1142
Abstract :
Framework is developed for estimation of power at pre register transfer level (RTL) stage for structured memory sub-systems. Power estimation model is proposed specifically targeting power consumed by clock network and interconnect. The model is validated with VCD-based simulation on back-annotated netlist of an 8 MB memory sub-system used as video RAM (VRAM) for high-end graphics applications. This methodology also forms the basis for low-power exploration driving floor plan choice, gating structure of data, and clock network. We demonstrate 57% reduction in dynamic power by using low-power techniques for the 8 MB VRAM used as frame buffer in a graphics processor. FALPEM can be extended to other applications like processor cache and ASIC designs.
Keywords :
random-access storage; video equipment; ASIC design; FALPEM; VCD-based simulation; VRAM; architectural-level power estimation; back-annotated netlist; clock network; data gating structure; dynamic power reduction; frame buffer; high-end graphics applications; interconnect; large-memory sub-systems; low-power exploration driving floor plan choice; low-power technique; power consumption; power estimation model; pre-RTL stage; pre-register transfer level stage; processor cache; structured memory sub-systems; video RAM; Capacitance; Clocks; Estimation; Integrated circuit modeling; Pipelines; Random access memory; Semiconductor device modeling; Analytical model; FD-SOI; FD-SOI, video RAM; Random Access Memory (RAM); analytical model; clock network; low power; memory sub-sys-tem; memory sub-system; power estima-tion; power estimation; power modeling; random access memory (RAM); video RAM (VRAM);
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2014.2387859
Filename :
7001659
Link To Document :
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