Title :
A C-band monolithic silicon-bipolar low-power low-IF WLAN receiver
Author :
Carta, C. ; Schmatz, M. ; Vogt, R. ; Bachtold, W.
Abstract :
This paper presents the design, implementation and measurements of a monolithic low-IF receiver compliant with the main 5GHz WLAN standards. It consists of a low-noise preamplifier, that is simultaneously noise and power matched to the RF source, two matched active single-balanced mixers and two polyphase filters used to generate LO quadrature signals and provide image rejection. Realized in a 47 GHz-ft commercial BiCMOS technology, the circuit exhibits 25 dB of conversion gain, 35 dB of IRR, 8.9 dB of NF. -12.5 dBm and -19 dBm of iIP\n\n\t\t
Keywords :
BiCMOS integrated circuits; Costs; Electromagnetic fields; Energy consumption; Gain; Image converters; Laboratories; RF signals; Radio frequency; Wireless LAN;
Conference_Titel :
Wireless Technology, 2004. 7th European Conference on
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-991-2