• DocumentCode
    427214
  • Title

    A C-band monolithic silicon-bipolar low-power low-IF WLAN receiver

  • Author

    Carta, C. ; Schmatz, M. ; Vogt, R. ; Bachtold, W.

  • fYear
    2004
  • fDate
    11-12 Oct. 2004
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    This paper presents the design, implementation and measurements of a monolithic low-IF receiver compliant with the main 5GHz WLAN standards. It consists of a low-noise preamplifier, that is simultaneously noise and power matched to the RF source, two matched active single-balanced mixers and two polyphase filters used to generate LO quadrature signals and provide image rejection. Realized in a 47 GHz-ft commercial BiCMOS technology, the circuit exhibits 25 dB of conversion gain, 35 dB of IRR, 8.9 dB of NF. -12.5 dBm and -19 dBm of iIP\n\n\t\t
  • Keywords
    BiCMOS integrated circuits; Costs; Electromagnetic fields; Energy consumption; Gain; Image converters; Laboratories; RF signals; Radio frequency; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Technology, 2004. 7th European Conference on
  • Conference_Location
    Amsterdam, The Netherlands
  • Print_ISBN
    1-58053-991-2
  • Type

    conf

  • Filename
    1394756