DocumentCode :
427261
Title :
A SiGe HBT variable gain amplifier with 80 dB control range for applications up to 3 GHz
Author :
Byrne, N. ; Murphy, P.J. ; McCarthy, K.G. ; Foley, B.
fYear :
2004
fDate :
11-12 Oct. 2004
Firstpage :
193
Lastpage :
196
Abstract :
A variable eain amplifier suitable for wideband applications (up to 3GHz) has been designed and fabricated in a SiGe BiCMOS process with fT = 49 GHz. Variable gain is achieved with a current steering diflerential cascode cell. The amplifier has B linear-io-dB gain range of 82 dB at 1.85 G H a~nd 65 dB at 2.5 GHZw, hich is the largest control ranee reoorted to date. The amolifrer has a maximum gain of 18.\n\n\t\t
Keywords :
Attenuators; Broadband amplifiers; Electric variables control; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless Technology, 2004. 7th European Conference on
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-991-2
Type :
conf
Filename :
1394803
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=427261
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