Title : 
A 900-MHz fully integrated LC-VCO for ISM applications
         
        
            Author : 
Teichmann, P. ; Peter, J. ; Laute, A.
         
        
        
        
        
        
            Abstract : 
In this paper, a fully integrated LC-VCO for FSWASK applications in the 868-MHz and 915-MHz ISM bands is presented. The VCO was realized in a 0.5-pm BiCMOS process with a power metal layer and integrated varactor diodes. For the VCO design, the focus was on simplicity, good bias noise suppression, and a wide supply voltage range. The achieved phase noise level is -99 dBcMz at an offset frequency af 1QQ kHz. The circuit consumes only 1.35 mA from a supply voltage between 1.9 V and 5.5 V. The VCO is controlled with AC-coupled integrated varactor diodes and achieves a tuning range of 160 MHz at a nominal supply voltage of 3 V.
         
        
            Keywords : 
BiCMOS integrated circuits; Diodes; Frequency shift keying; Inductors; Parasitic capacitance; Phase noise; Topology; Varactors; Voltage; Voltage-controlled oscillators;
         
        
        
        
            Conference_Titel : 
Wireless Technology, 2004. 7th European Conference on
         
        
            Conference_Location : 
Amsterdam, The Netherlands
         
        
            Print_ISBN : 
1-58053-991-2