Page replacement algorithm based on counting bloom filter for NAND flash memory

In this paper, a page replacement algorithm based on counting bloom filter for NAND flash memory is proposed. This algorithm mainly consists of two schemes: the data separation scheme based on counting bloom filter and the free block management scheme. The former is used for classifying the dirty subpages within the victim pages as hot or cold and the latter is used for classifying the free blocks within the free block list into young or old. Moreover, in order to improve the performance of NAND flash memory, the hot dirty subpages are written back to the young free block, and the cold subpages are distributed to the old free block. Experimental results show that the proposed algorithm performs better than the existing page replacement algorithms in terms of the number of write operations, the total runtime, the buffer hit ratio and the degree of wear leveling.