DocumentCode :
42881
Title :
Impact of Random Interface Traps and Random Dopants in High- 
/Metal Gate Junctionless FETs
Author :
Yijiao Wang ; Peng Huang ; Kangliang Wei ; Lang Zeng ; Xiaoyan Liu ; Gang Du ; Xing Zhang ; Jinfeng Kang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Volume :
13
Issue :
3
fYear :
2014
fDate :
May-14
Firstpage :
584
Lastpage :
588
Abstract :
In this paper, the fluctuation of random interface traps (RITs) and its interaction with random dopants of 22-nm junctionless FETs (JL-FET) with high- k/metal gate (HKMG) are investigated with 3-D statistical TCAD simulations. The impacts of RIT and random dopant fluctuation (RDF) on the performances of JL-FET are evaluated separately and together. The results show that acceptor-like interface traps mainly affect the drive current, while donor-like interface traps have a significant impact on the subthreshold region. RIT and RDF have different impacts on device performance. Although the influence of RDF is larger than RIT, the impact of RIT cannot be neglected due to their strong correlation. The variation induced by RIT and RDF should be taken into account simultaneously for HKMG JL-FETs.
Keywords :
field effect transistors; interface states; semiconductor doping; statistical analysis; technology CAD (electronics); 3D statistical TCAD simulations; acceptor-like interface traps; donor-like interface traps; drive current; high-k-metal gate junctionless FET; random dopant fluctuation; random interface traps; size 22 nm; subthreshold region; Educational institutions; Fluctuations; Logic gates; MOSFET; Microelectronics; Resource description framework; Semiconductor process modeling; High-$k$
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2014.2312482
Filename :
6775337
Link To Document :
