• DocumentCode
    428922
  • Title

    X-ray structural characteristics of nc-Si obtained by thermal annealing of a-Si and SiOx layers

  • Author

    Kleps, I. ; Danila, M. ; Angelescu, A. ; Miu, Marius ; Simion, M. ; Bragaru, A. ; Ignat, T.

  • Author_Institution
    National Inst. for R&D in Microtechnologies, Bucharest, Romania
  • Volume
    1
  • fYear
    2004
  • fDate
    4-6 Oct. 2004
  • Lastpage
    92
  • Abstract
    Structural characteristics of nc-Si obtained by thermal annealing of a-Si and SiOx layers are investigated by X-ray diffraction method. Standard silicon technology processes were used in order to obtain Si nanocrystallites embedded in a-Si or in SiO2 layer. The nanocrystallite formation process was enhanced by the stress occurred in silicon oxides sandwich or in porous silicon structures.
  • Keywords
    X-ray diffraction; elemental semiconductors; nanostructured materials; semiconductor technology; silicon compounds; Si nanocrystallites; SiO2; SiOx layers; X-ray diffraction; X-ray structural characteristics; a-Si; nanocrystallite formation; nc-Si; porous silicon structures; silicon oxides sandwich; standard silicon technology; stress; thermal annealing; Annealing; Atmosphere; Industrial electronics; Laser ablation; Nanobioscience; Nanoparticles; Oxidation; Silicon; Substrates; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
  • Print_ISBN
    0-7803-8499-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2004.1402811
  • Filename
    1402811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=428922