Low temperature wafer bonding for microsystems applications

Author

Dragoi, V. ; Farrens, S. ; Lindner, P. ; Weixlberger, J.

Author_Institution

EV Group, DIE, Scharding, Austria

Volume

1

fYear

2004

fDate

4-6 Oct. 2004

Lastpage

202

Abstract

A wide range of MEMS applications are using different wafer bonding processes. Due to the variety of materials and due to the specific mechanical structure of the MEMS devices, high temperature steps constitute the main limitation of wafer bonding. Various techniques were developed for keeping the maximum process temperature below 400°C. This paper introduces a low temperature wafer bonding technique which uses plasma treatment of wafers prior to bonding for surface activation. The process is optimized for use of different materials and the maximum process temperature ranges between room temperature to 400° C.

Keywords

cryogenic electronics; micromechanical devices; sputter etching; wafer bonding; 400 C; MEMS devices; high temperature steps; low temperature wafer bonding; mechanical structure; microsystems applications; plasma treatment; process optimization; process temperature; surface activation; Etching; Microelectromechanical devices; Micromechanical devices; Plasma applications; Plasma chemistry; Plasma temperature; Surface topography; Surface treatment; Wafer bonding; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International

Print_ISBN

0-7803-8499-7

Type

conf

DOI

10.1109/SMICND.2004.1402839

Filename

1402839