DocumentCode :
428939
Title :
Theoretical and experimental study of the effect of carrier relaxation on threshold and power-current characteristics of quantum well lasers
Author :
Zegrya, G.G. ; Bazhenov, N.L. ; Dorofeyev, D.V. ; Evtikhiev, V.P. ; Kotelnikov, E.Yu. ; Mynbaev, K.D. ; Solovyev, I.Yu. ; Shkolnik, A.S.
Author_Institution :
Ioffe Physico-Tech. Inst., St.Petersburg, Russia
Volume :
1
fYear :
2004
fDate :
4-6 Oct. 2004
Lastpage :
212
Abstract :
In this paper, the effect of intraband relaxation processes of non-equilibrium carriers on the threshold and power-current characteristics of quantum-well lasers is studied both theoretically and experimentally. Special attention is paid to the study of physical mechanisms, which affect the maximum laser power. It is shown that at high excitation levels, the maximum laser power gets affected, apart from lattice and carrier heating, by the phenomenon of gain saturation. Power-current characteristics of a quantum well laser are calculated with gain saturation effect being taken into account. It is shown that at high excitation levels the characteristic becomes non-linear. Calculated behavior of power-current characteristics agrees well with experimental observations.
Keywords :
carrier density; quantum well lasers; carrier heating; carrier relaxation; excitation levels; experimental study; gain saturation; intraband relaxation; lattice heating; maximum laser power; non-equilibrium carriers; physical mechanisms; power-current characteristics; quantum well lasers; theoretical study; threshold characteristics; Electromagnetic wave absorption; Electrons; Laser theory; Optical device fabrication; Photonic band gap; Power lasers; Quantum mechanics; Quantum well lasers; Semiconductor lasers; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
Type :
conf
DOI :
10.1109/SMICND.2004.1402843
Filename :
1402843
Link To Document :
بازگشت