DocumentCode :
43003
Title :
Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors
Author :
Li, Wenjun ; Sharmin, Saima ; Ilatikhameneh, Hesameddin ; Rahman, Rajib ; Lu, Yeqing ; Wang, Jingshan ; Yan, Xiaodong ; Seabaugh, Alan ; Klimeck, Gerhard ; Jena, Debdeep ; Fay, Patrick
Author_Institution :
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
Volume :
1
fYear :
2015
fDate :
Dec. 2015
Firstpage :
28
Lastpage :
34
Abstract :
The concept and simulated device characteristics of tunneling field-effect transistors (TFETs) based on III-nitride heterojunctions are presented for the first time. Through polarization engineering, interband tunneling can become significant in III-nitride heterojunctions, leading to the potential for a viable TFET technology. Two prototype device designs, inline and sidewall-gated TFETs, are discussed. Polarization-assisted p-type doping is used in the source region to mitigate the effect of the deep Mg acceptor level in p-type GaN. Simulations indicate that TFETs based on III-nitride heterojunctions can be expected to achieve ON/ OFF ratios of 
or more, with switching slopes well below 60 mV/decade, ON-current densities approaching 100 
, and energy delay products as low as 67 aJ-ps/ 
.
Keywords :
Computational modeling; Doping; Gallium nitride; Heterojunctions; Logic gates; Photonic band gap; Tunneling; III-nitride heterojunction; InN; polarization engineering; tunnel field-effect transistors (TFETs);
fLanguage :
English
Journal_Title :
Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on
Publisher :
ieee
ISSN :
2329-9231
Type :
jour
DOI :
10.1109/JXCDC.2015.2426433
Filename :
7094229
Link To Document :
