Title :
A high efficient LDMOS power amplifier based on an inverse class F architecture
Author :
Lepine, F. ; Adahl, A. ; Zirath, H.
Abstract :
A power amplifier based on the inverse Class F topology bas been developed. The design has been done at 1 GHz with an LDMOS transistor as an active element. The PAE and the drain eficiency of the power amplifier are 73.8% and 77.8% respectively at an output power of 12.4W. This is to our knowledge the highest efficiency and output power for an LDMOS-based inverse Class F power amplifier working at 1 GHz.
Keywords :
Costs; High power amplifiers; Impedance; Laboratories; Microwave amplifiers; Microwave transistors; Power amplifiers; Power generation; Topology; Voltage;
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
