A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs

Author

Amoroso, Salvatore Maria ; Adamu-Lema, Fikru ; Brown, Andrew R. ; Asenov, Asen

Author_Institution

Gold Stand. Simulations Ltd., Glasgow, UK

Volume

62

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

2056

Lastpage

2060

Abstract

A comprehensive statistical investigation of the increase in resistance associated with charge trapping in atomistic simulations is presented. A wide range of doping densities and mesh spacing are considered for both classical and quantum formalisms. A doping-dependent correction factor to modify the mobility model for the atomistic simulations is proposed to suppress the error related to the fictitious charge trapping. The validity of the new mobility model is tested in the statistical simulations of the transistors corresponding to 20-nm bulk CMOS and 14-nm FinFET transistors.

Keywords

CMOS integrated circuits; MOSFET; semiconductor device models; semiconductor doping; FinFET transistors; atomistic drift-diffusion simulation; bulk CMOS; charge trapping; classical formalism; comprehensive statistical investigation; doping density; mobility correction; nanoMOSFET; overcoming artifacts; quantum formalism; size 14 nm; size 20 nm; statistical simulations; Doping; FinFETs; Resistance; Resistors; Semiconductor device modeling; Semiconductor process modeling; Atomistic simulation; density gradient (DG); mobility model; mobility model.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2419815

Filename

7094235