Title :
Simulation of the temperature injection PHEMT
Author :
Di, Song ; Chang-Zhi, Li ; Xiao-Dan, Cai
Author_Institution :
Sch. of Electr. Inf. & Autom., Beijing Univ. of Technol., China
Abstract :
A new microwave device model is brought out and simulated, which is called TI-PHEMT. The maximum extrinsic transconductance at high temperature increases significantly and therefore the microwave performance of HEMT at high temperature is increased. A new concept "temperature injection" is put forward to explain the reason.
Keywords :
III-V semiconductors; gallium arsenide; high-temperature electronics; microwave devices; power HEMT; semiconductor device models; GaAs; TI-PHEMT; high temperature characteristic; maximum extrinsic transconductance; microwave device model; microwave performance; temperature injection; Doping; Gallium arsenide; HEMTs; Indium gallium arsenide; Microwave devices; PHEMTs; Semiconductor process modeling; Size control; Temperature; Transconductance;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2004. ICMMT 4th International Conference on, Proceedings
Print_ISBN :
0-7803-8401-6
DOI :
10.1109/ICMMT.2004.1411584
