Characteristics of low noise 800MHz amplifier at cryogenic temperature

Author

Wang, F. ; Zhang, X.P. ; Gao, L.M. ; Wei, Bin ; Cao, B.S. ; Gao, B.X.

Author_Institution

Dept. of Phys., Tsinghua Univ., Beijing, China

fYear

2004

fDate

18-21 Aug. 2004

Firstpage

991

Lastpage

994

Abstract

Low noise amplifiers (LNA) have been designed and developed with high performance at cryogenic temperature in CDMA superconducting receiver front end. The low noise amplifier has been characterized at liquid nitrogen temperatures. The frequency band is in the range from 780MHz to 880MHz using Agilent PHEMT which has low noise figure at cryogenic temperatures. The components were implemented with lumped elements, which can make the LNA for the miniaturization and reduce the load consumption of the cooler. In the frequency band of operation at 60K, the achieved noise figure (NF) is within 0. 3 dB from the minimum NF of a single transistor, the power gain is about 17 dB, flat is within 1 dB, the maximum input VSWR_in and output VSWR_out are lower than 1.3 individually.

Keywords

amplifiers; code division multiple access; low-temperature techniques; power HEMT; superconducting device testing; 0.3 dB; 60 K; 780 to 880 MHz; CDMA; cryogenic temperature; liquid nitrogen temperatures; low noise amplifier; lumped elements; superconducting receiver front end; Cryogenics; Frequency; Low-noise amplifiers; Multiaccess communication; Nitrogen; Noise figure; Noise measurement; PHEMTs; Superconducting device noise; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2004. ICMMT 4th International Conference on, Proceedings

Print_ISBN

0-7803-8401-6

Type

conf

DOI

10.1109/ICMMT.2004.1411698

Filename

1411698