Title :
110GHz high-gain flip-chip InP HEMT amplifier with resin encapsulation on an organic substrate
Author :
Masuda, S. ; Kira, H. ; Hirose, T.
Abstract :
A high-gain amplifier monolithic microwave integrated circuit (MMIC) was developed using InP HEMT technology with inverted microstrip lines. The six-stage amplifier demonstrated a gain of 30 dB at 110 GHz. We also fabricated a resin-sealed flipchip MMIC on a highly isolated cost-effective glass-epoxy substrate, achieving a gain of 28 dB at 110 GHz. To the best oi our knowledge, this is the highest gain in the W-hand for a flip-chip MMIC sealed with resin.
Keywords :
Assembly; Coplanar waveguides; Dielectric substrates; Encapsulation; HEMTs; Indium phosphide; MMICs; Microwave amplifiers; Packaging; Resins;
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
