DocumentCode :
430581
Title :
A GaAs-HBT broadband amplifier with near-f/sub T/ cut-off frequency for high-bitrate transmission
Author :
Meliani, C. ; Rudolph, M. ; Hilsenbeck, J. ; Heinrich, W.
Volume :
1
fYear :
2004
fDate :
12-14 Oct. 2004
Firstpage :
341
Lastpage :
344
Abstract :
broadband amplifier for high-bilrate lransmission is presenfed, using a standard CaAs-HBTprocess wifh fr and fnw of 36 ond 170 GHz, respective@, af the operating bias point The design fakes opfimum advantage of the available fechnoloe, reaching 75% of fr, a record value for GaAs HBT Well-opened outpuf eye diagrams at 20 and 40 Cbps are obtained wifh 1.4 Vpp and 1.2 Vpp, respectively, as well as a 4 Vpp output swing at 20 Gbps for 1.7 Vpp input signal. The measured eye diagrams demonstrafe the potential for applications as 40 Cbps pre-amplifier and 20 Cbps modulator drivers
Keywords :
Broadband amplifiers; CMOS technology; Capacitance; Cutoff frequency; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Signal design; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2004. 34th European
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-992-0
Type :
conf
Filename :
1412591
Link To Document :
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