Design of a 12.8-Gb/s InP HBT limiting amplifier with cross-point control for driving a distributed modulator driver

Author

Chiang, David H. ; Oyama, B.K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Texas A&M Univ., Kingsville, TX, USA

Volume

1

fYear

2004

fDate

6-9 Dec. 2004

Firstpage

117

Abstract

A 12.8-Gb/s InP HBT limiting amplifier for driving a distributed modulator driver has been designed. The limiting amplifier has cross-point and gain-control features. The key block of the amplifier is a cascode emitter-coupled pair with Schottky diode output clamps to achieve the limiting function. The cross-point feature is realized by generating a DC offset current for the emitter-coupled pair. The limiting amplifier was fabricated in a 1.5-μm InP HBT process. The measured cross-point control range and rise/fall time are 33% to 83%, 15.8ps/10.4ps respectively.

Keywords

III-V semiconductors; Schottky diodes; amplifiers; driver circuits; gain control; heterojunction bipolar transistors; indium compounds; limiters; optical communication equipment; optical modulation; 1.5 micron; 10.4 ps; 12.8 Gbits/s; 15.8 ps; DC offset current; HBT limiting amplifier; InP; Schottky diode output clamps; cascode emitter-coupled pair; cross-point control; distributed modulator driver; gain control; Chirp modulation; Distributed amplifiers; Driver circuits; Fiber nonlinear optics; Heterojunction bipolar transistors; Indium phosphide; Optical amplifiers; Optical modulation; Optical receivers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-8660-4

Type

conf

DOI

10.1109/APCCAS.2004.1412706

Filename

1412706