Title :
Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35μm SiGe BiCMOS process
Author :
Li, Day-Uei ; Tsai, Chiailding ; Huang, Li-Ren
Author_Institution :
SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A laser driver capable of driving over 100 mA modulation current fabricated in 0.35μm SiGe BiCMOS process was presented in this work. Measurements on mounted chips show clear electrical eye diagrams over 14-Gb/s data rate with a typical (20% to 80%) 24 ps rise time, 26 ps (20% to 80%) fall time, and a jitter (RMS) less than 2 ps. Moreover, optical eye diagram is also demonstrated by connecting the driver with a commercial 10-Gb/s 1310-nm laser diode and it stays well within the 10-Gb/s Ethernet transmitter mask.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; driver circuits; integrated optoelectronics; optical communication equipment; optical modulation; semiconductor lasers; 0.35 micron; 10 Gbit/s; 1310 nm; 14 Gbit/s; BiCMOS process; SiGe; electrical eye diagram; high modulation output; laser diode; laser driver; modulation current; modulator driver; optical eye diagram; BiCMOS integrated circuits; Electric variables measurement; Germanium silicon alloys; Jitter; Joining processes; Optical transmitters; Semiconductor device measurement; Signal analysis; Silicon germanium; Time measurement;
Conference_Titel :
Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-8660-4
DOI :
10.1109/APCCAS.2004.1412733
