Title :
A 1.8-V monolithic SiGe HBT power amplifier with a novel proposed linearizing bias circuit
Author :
Yeh, Ping-Chun ; Lin, Kuei-Cheng ; Lee, C.Y. ; Chiou, Hwann-Kaeo
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li
Abstract :
In this work, we report a linearization technique by using an on-chip linearizer. The linearizer consists of a SiGe heterojunction bipolar transistors active bias circuit with a MOSFET feedback junction capacitor, which significantly improves the gain compression and phase distortion without additional dc consumption. The proposed circuit topology finds extensive applications in high efficiency and linearity power amplifier design. The power amplifier is implemented by using TSMC 0.18 mum SiGe HBT technology. The compact VBIC model of SiGe HBT was successfully established for the circuit design, and then a 2 GHz power amplifier was designed for demonstrating the circuit performances. The HBT power amplifier exhibits an output power over 20 dBm with a power-added efficiency higher than 42.4% under 1.8 volt operation
Keywords :
active networks; heterojunction bipolar transistors; integrated circuit design; linearisation techniques; monolithic integrated circuits; power amplifiers; 0.18 micron; 1.8 V; 2 GHz; MOSFET feedback junction capacitor; SiGe; circuit design; circuit topology; gain compression; heterojunction bipolar transistors active bias circuit; linearizing bias circuit; monolithic HBT power amplifier; on-chip linearizer; phase distortion; power amplifier design; Capacitors; Feedback circuits; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Linearization techniques; MOSFET circuits; Phase distortion; Power amplifiers; Silicon germanium;
Conference_Titel :
Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on
Conference_Location :
Tainan
Print_ISBN :
0-7803-8660-4
DOI :
10.1109/APCCAS.2004.1412755
