Calculations concerning the electron transit time for an ideal spherical vacuum microelectronics diode

Summary form only given. Sixteen years have elapsed since the 1st International Vacuum Microelectronics (VME) was held. Although much progress and many innovations have been made in this area, there still are a lot of work which need further consideration up to now. One problem is the application of vacuum microelectronics device (VME device) to the microwave devices, which are becoming more important as military electronic equipment develops. The quest to solve this problem is also one of the latest and most promising research in VME. Of course, for a VME microwave device, the estimation of the electron transit time t is rudimentary. As we know, this parameter decided on the performances and applications of the vacuum microelectronics device. Previous to this paper, the research after the electron transit time for the VME devices, was generally in accordance with the device which was with an ideal planar electrode system. This work will complement previous works. First of all, we´ll derive mathematically the formulae of the electron transit time for an ideal spherical vacuum microelectronic (IS-VME) diode from its basic definition, by using the Laplace equation´s solution of a relative work. We will then introduce an idea about an equivalent IS-VME diode, and let the later be equivalent to a VME triode. Finally, the electron transit time for a spherical vacuum microelectronic IS-VME triode is estimated further.