Title :
Silicon germanium quantum cascade heterostructures for infrared emission
Author :
Kelsall, R.W. ; Domic, Z. ; Harrison, P. ; Lynch, S.A. ; Townsend, P. ; Paul, D.J. ; Norris, D.J. ; Liew, S.L. ; Cullis, A.G. ; Li, X. ; Zhang, J. ; Bain, M. ; Gamble, H.S.
Author_Institution :
Inst. of Microwaves & Photonics, Leeds Univ., UK
fDate :
29 Sept.-1 Oct. 2004
Abstract :
This work demonstrates that there are no fundamental obstacles to the realization of a Si/SiGe quantum cascade laser. This study also reports a number of significant achievements which indicate that the technology is now sufficient, or can be developed to a sufficient level, to attain a working device.
Keywords :
Ge-Si alloys; elemental semiconductors; infrared sources; quantum cascade lasers; semiconductor heterojunctions; silicon; Si-SiGe; infrared emission; quantum cascade heterostructures; quantum cascade laser; silicon germanium heterostructures; Capacitive sensors; Germanium silicon alloys; III-V semiconductor materials; Laser transitions; Optical design; Quantum cascade lasers; Quantum well lasers; Silicon germanium; Spontaneous emission; Tensile strain;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416644
