DocumentCode
432132
Title
CMUTs with dual electrode structure for improved transmit and receive performance
Author
McLean, Jeff ; Guldiken, Rasim O. ; Degertekin, F. Levent
Author_Institution
George W. Woodruff Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
1
fYear
2004
fDate
23-27 Aug. 2004
Firstpage
501
Abstract
We report on the use of a dual electrode structure to improve the performance of capacitive micromachined ultrasonic transducers (CMUTs.). In the dual electrode structure, separate transmit and receive electrodes are embedded either in the same CMUT membrane or in the dielectric substrate beneath the same membrane. This configuration has several advantages. First, the maximum pressure amplitude during transmit mode can be significantly increased by locating the transmit electrodes near the edges of the membrane. In this case, leveraged bending increases the maximum displacement without collapsing the membrane. Second, since the DC bias of the electrodes can be controlled independently, the device capacitance can be increased during the receive time by biasing both receive and transmit electrodes. Additionally, separate electronics can be used for transmit and receive without the need for a switch. We have fabricated a 0.3×0.65 mm2 CMUT element consisting of 20 μm wide, 100 μm long and 0.9 μm thick rectangular silicon nitride membranes. The transmit electrodes are 4 μm wide and located at the edges of the membrane, whereas the 8 μm wide receive electrode is at the center. With this non-optimized structure, we measured a 6.8 dB increase in maximum output pressure at 9 MHz with side electrode excitation. We also demonstrated the possibility of using dual electrodes for simultaneous excitation and detection of several CMUT membrane vibration modes.
Keywords
capacitive sensors; electrodes; membranes; microsensors; substrates; ultrasonic transducers; 0.3 mm; 0.65 mm; 0.9 to 20 micron; 9 MHz; CMUT membrane vibration modes; DC bias; SiN; capacitive micromachined ultrasonic transducers; capacitive transducers; dielectric substrate; dual electrode structure; leveraged bending; pressure amplitude; receive electrodes; silicon nitride membranes; transmit electrodes; Biomembranes; Capacitance; Dielectric substrates; Electrodes; Finite element methods; Mechanical engineering; Silicon; Switches; Ultrasonic transducers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2004 IEEE
ISSN
1051-0117
Print_ISBN
0-7803-8412-1
Type
conf
DOI
10.1109/ULTSYM.2004.1417772
Filename
1417772
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