• DocumentCode
    43320
  • Title

    Anchor Losses in AlN Contour Mode Resonators

  • Author

    Segovia-Fernandez, Jeronimo ; Cremonesi, Massimiliano ; Cassella, Cristian ; Frangi, Attilio ; Piazza, Gianluca

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
  • Volume
    24
  • Issue
    2
  • fYear
    2015
  • fDate
    Apr-15
  • Firstpage
    265
  • Lastpage
    275
  • Abstract
    In this paper, we analyze possible sources of dissipation in aluminium nitride (AlN) contour mode resonators for three different resonance frequency devices (fr) (220 MHz, 370 MHz, and 1.05 GHz). For this purpose, anchors of different widths (Wa) and lengths (La) proportional to the acoustic wavelength (λ) are designed as supports for resonators in which the dimensions of the vibrating body are kept fixed. The Q extracted experimentally confirms that anchor losses are the dominant source of damping for most anchor designs when fr is equal to 220 and 370 MHz. For specific anchor dimensions (Wa/λ is in the range of 1/4-1/2) that mitigate energy leakage through the supports, a temperature-dependent dissipation mechanism dominates as seen in higher fr resonators operating close to 1.05 GHz. To describe the Q due to anchor losses, we use a finite-element method with absorbing boundary conditions. We also propose a simple analytical formulation for describing the dependence of the temperature-dependent damping mechanism on frequency. In this way, we are able to quantitatively predict Q due to anchor losses and qualitatively describe the trends observed experimentally.
  • Keywords
    III-V semiconductors; aluminium compounds; damping; finite element analysis; micromechanical resonators; wide band gap semiconductors; AlN; aluminium nitride contour mode resonators; anchor losses; energy leakage; finite-element method; frequency 1.05 GHz; frequency 220 MHz; frequency 370 MHz; resonance frequency devices; temperature-dependent damping mechanism; temperature-dependent dissipation mechanism; Damping; Electrodes; III-V semiconductor materials; Metals; Resonant frequency; Temperature dependence; Temperature measurement; AlN contour mode resonators; anchor losses; finite element analysis; perfectly matched layer; perfectly matched layer.; quality factor; temperature dependent dissipation;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2014.2367418
  • Filename
    6957513