DocumentCode
43320
Title
Anchor Losses in AlN Contour Mode Resonators
Author
Segovia-Fernandez, Jeronimo ; Cremonesi, Massimiliano ; Cassella, Cristian ; Frangi, Attilio ; Piazza, Gianluca
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume
24
Issue
2
fYear
2015
fDate
Apr-15
Firstpage
265
Lastpage
275
Abstract
In this paper, we analyze possible sources of dissipation in aluminium nitride (AlN) contour mode resonators for three different resonance frequency devices (fr) (220 MHz, 370 MHz, and 1.05 GHz). For this purpose, anchors of different widths (Wa) and lengths (La) proportional to the acoustic wavelength (λ) are designed as supports for resonators in which the dimensions of the vibrating body are kept fixed. The Q extracted experimentally confirms that anchor losses are the dominant source of damping for most anchor designs when fr is equal to 220 and 370 MHz. For specific anchor dimensions (Wa/λ is in the range of 1/4-1/2) that mitigate energy leakage through the supports, a temperature-dependent dissipation mechanism dominates as seen in higher fr resonators operating close to 1.05 GHz. To describe the Q due to anchor losses, we use a finite-element method with absorbing boundary conditions. We also propose a simple analytical formulation for describing the dependence of the temperature-dependent damping mechanism on frequency. In this way, we are able to quantitatively predict Q due to anchor losses and qualitatively describe the trends observed experimentally.
Keywords
III-V semiconductors; aluminium compounds; damping; finite element analysis; micromechanical resonators; wide band gap semiconductors; AlN; aluminium nitride contour mode resonators; anchor losses; energy leakage; finite-element method; frequency 1.05 GHz; frequency 220 MHz; frequency 370 MHz; resonance frequency devices; temperature-dependent damping mechanism; temperature-dependent dissipation mechanism; Damping; Electrodes; III-V semiconductor materials; Metals; Resonant frequency; Temperature dependence; Temperature measurement; AlN contour mode resonators; anchor losses; finite element analysis; perfectly matched layer; perfectly matched layer.; quality factor; temperature dependent dissipation;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2014.2367418
Filename
6957513
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