DocumentCode :
433223
Title :
Intersubband semiconductor light sources: history, status, and future
Author :
Helm, Manfred
Author_Institution :
Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany
fYear :
2004
fDate :
27 Sept.-1 Oct. 2004
Firstpage :
57
Lastpage :
58
Abstract :
After the first theoretical proposal in 1971, it took more than two decades until the first laser based on intersubband transitions in semiconductor quantum structures was demonstrated. The progress since then has indeed been spectacular with lasers now spanning the range from 3.5 to 140 μm. The physics of these devices can be elucidated and some crucial achievements was highlighted. Finally, the perspectives for closing the still existing wavelength gap (25-60 μm) and extending the covered range to even longer as well as shorter wavelength was discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor quantum wells; InGaAs-AlAsSb; intersubband semiconductor light sources; intersubband transitions; semiconductor quantum structures; shorter wavelength; wavelength gap; History; Laser theory; Laser transitions; Light sources; Optical materials; Optical scattering; Phonons; Physics; Quantum cascade lasers; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
Type :
conf
DOI :
10.1109/ICIMW.2004.1421951
Filename :
1421951
Link To Document :
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