• DocumentCode
    433223
  • Title

    Intersubband semiconductor light sources: history, status, and future

  • Author

    Helm, Manfred

  • Author_Institution
    Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany
  • fYear
    2004
  • fDate
    27 Sept.-1 Oct. 2004
  • Firstpage
    57
  • Lastpage
    58
  • Abstract
    After the first theoretical proposal in 1971, it took more than two decades until the first laser based on intersubband transitions in semiconductor quantum structures was demonstrated. The progress since then has indeed been spectacular with lasers now spanning the range from 3.5 to 140 μm. The physics of these devices can be elucidated and some crucial achievements was highlighted. Finally, the perspectives for closing the still existing wavelength gap (25-60 μm) and extending the covered range to even longer as well as shorter wavelength was discussed.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor quantum wells; InGaAs-AlAsSb; intersubband semiconductor light sources; intersubband transitions; semiconductor quantum structures; shorter wavelength; wavelength gap; History; Laser theory; Laser transitions; Light sources; Optical materials; Optical scattering; Phonons; Physics; Quantum cascade lasers; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
  • Print_ISBN
    0-7803-8490-3
  • Type

    conf

  • DOI
    10.1109/ICIMW.2004.1421951
  • Filename
    1421951