DocumentCode
433223
Title
Intersubband semiconductor light sources: history, status, and future
Author
Helm, Manfred
Author_Institution
Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany
fYear
2004
fDate
27 Sept.-1 Oct. 2004
Firstpage
57
Lastpage
58
Abstract
After the first theoretical proposal in 1971, it took more than two decades until the first laser based on intersubband transitions in semiconductor quantum structures was demonstrated. The progress since then has indeed been spectacular with lasers now spanning the range from 3.5 to 140 μm. The physics of these devices can be elucidated and some crucial achievements was highlighted. Finally, the perspectives for closing the still existing wavelength gap (25-60 μm) and extending the covered range to even longer as well as shorter wavelength was discussed.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor quantum wells; InGaAs-AlAsSb; intersubband semiconductor light sources; intersubband transitions; semiconductor quantum structures; shorter wavelength; wavelength gap; History; Laser theory; Laser transitions; Light sources; Optical materials; Optical scattering; Phonons; Physics; Quantum cascade lasers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN
0-7803-8490-3
Type
conf
DOI
10.1109/ICIMW.2004.1421951
Filename
1421951
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