Title :
Millimeter-wave circuits based on advanced metamorphic HEMT technology
Author :
Tessmann, A. ; Leuther, A. ; Schwörer, C. ; Massler, H. ; Reinert, W. ; Walther, M. ; Lösch, R. ; Schlechtweg, Michael
Author_Institution :
Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany
fDate :
27 Sept.-1 Oct. 2004
Abstract :
Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length on 4" GaAs substrates for millimeter-wave applications are discussed in this paper. Extrinsic cut-off frequencies of ft=293 GHz and fmax=337 GHz were achieved. The IC process features high yield on transistor and circuit levels. Single-stage low-noise amplifiers demonstrate a small signal gain of 12 dB and a noise figure of 2.2 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 19 dB at 200 GHz. These results are equivalent to those achieved using state-of-the-art InP-based HEMT technologies.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit yield; millimetre wave integrated circuits; 12 dB; 19 dB; 2.2 dB; 200 GHz; 293 GHz; 337 GHz; 70 nm; 94 GHz; G-band operation; InAlAs-InGaAs; amplifier MMIC; extrinsic cut-off frequency; metamorphic HEMT technology; metamorphic InAlAs/InGaAs HEMT; millimeter wave applications; millimeter wave circuits; single stage low noise amplifiers; state of the art; Application specific integrated circuits; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Integrated circuit technology; MODFETs; Millimeter wave circuits; Submillimeter wave integrated circuits; mHEMTs;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422005
