Generation of THz emission from donor centers in silicon under intracenter optical pumping

Author

Pavlov, S.G. ; Hovenier, J.N. ; Klaassen, T.O. ; Carder, D. ; Hübers, H.W. ; Zhukavin, R.Kh. ; Riemann, H. ; Redlich, B. ; Shastin, V.N.

Author_Institution

Inst. for Planetary Res., German Aerosp. Center, Berlin, Germany

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

301

Lastpage

302

Abstract

Optical pumping of excited donor states in silicon crystals doped by antimony, phosphor, arsenic, and bismuth impurity centers by emission from a free electron laser yields stimulated terahertz emission (4-7 THz). The detailed study of silicon emission spectra provides information on intracenter phonon-assisted relaxation mechanisms in silicon at low lattice temperatures as well as on binding energies of excited states of donor centers.

Keywords

antimony; arsenic; binding energy; bismuth; elemental semiconductors; excited states; free electron lasers; impurity states; luminescence; optical pumping; phosphors; semiconductor lasers; silicon; stimulated emission; submillimetre wave lasers; 4 to 7 THz; Si:As; Si:Bi; Si:Sb; THz emission; antimony; arsenic; binding energy; bismuth; donor centers; excited donor states; free electron laser; impurity centers; intracenter optical pumping; intracenter phonon assisted relaxation mechanisms; lattice temperatures; phosphor; silicon crystals; silicon emission spectra; stimulated terahertz emission; Bismuth; Crystals; Electron emission; Free electron lasers; Impurities; Laser excitation; Optical pumping; Phosphors; Pump lasers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422076

Filename

1422076