Title :
High power HBV multipliers for F- and G-band applications
Author :
Emadi, T.A. ; Vukusic, J. ; Ingvarson, M. ; Olsen, A.O. ; Bryllert, T. ; Kollberg, E. ; Stake, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
27 Sept.-1 Oct. 2004
Abstract :
Progress and realisation of applications in the 100-240 GHz region is inhibited by the lack of high-power sources. Therefore, in an effort to reach watts of output power, we have tailored devices, circuits, materials, and design and fabrication methods for improved thermal management and high overall conversion efficiencies.
Keywords :
III-V semiconductors; frequency multipliers; gallium arsenide; indium compounds; semiconductor epitaxial layers; varactors; 100 to 240 GHz; F-band applications; G-band applications; InGaAs; InP; heterostructure barrier varactor diode multipliers; tailored circuits; tailored devices; tailored materials; thermal management; Circuits; Fingers; Frequency; Geometry; Indium gallium arsenide; Power generation; Schottky diodes; Temperature; Thermal management; Varactors;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422085
