Non-contact measurement of MOSFET with zero bias voltage using the laser-THz emission microscope

Author

Yamashita, Masatsugu ; Kiwa, Toshihiko ; Tonouchi, Masayoshi ; Nikawa, Kiyoshi ; Otani, Chiko ; Kawase, Kodo

Author_Institution

RIKEN, Wako, Japan

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

515

Lastpage

516

Abstract

For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.

Keywords

MOSFET; failure analysis; inspection; integrated circuit reliability; large scale integration; laser beam effects; optical microscopy; submillimetre wave imaging; LSI circuits; LSI failure analysis; MOSFET; defect localization; electrical failure inspection; femtosecond laser pulses; in-line inspection; in-line monitoring; large scale integration circuits; laser-THz emission microscopy; noncontact measurement; zero bias voltage; Circuit testing; Failure analysis; Integrated circuit measurements; Large scale integration; Laser excitation; MOSFET circuits; Microscopy; Optical pulses; Pulse circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422190

Filename

1422190