DocumentCode :
433353
Title :
High conversion gain millimeter-wave optoelectronic mixer based on InAlAs/InGaAs metamorphic HEMT
Author :
Kang, Hyo-Soon ; Choi, Chang-Soon ; Choi, Woo-Young ; Kim, Dae-Hyun ; Seo, Kwang-Seok
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
fYear :
2003
fDate :
10-12 Sept. 2003
Firstpage :
105
Lastpage :
108
Abstract :
We experimentally investigate the InAlAs/InGaAs metamorphic HEMT (m-HEMT) on GaAs substrate as a millimeter-wave optoelectronic mixer. The maximum internal conversion gain of 18.17 dB is obtained with 0 dBm local oscillator (LO) power. The m-HEMT exhibits a wide LO frequency range which is well extended to the millimeter-wave band. We also measured the spurious free dynamic range of the m-HEMT as an optoelectronic mixer, whose value is about 96 dBHz23/.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave photonics; millimetre wave mixers; GaAs; InAlAs-InGaAs; InAlAs/InGaAs HEMT; high conversion gain; metamorphic HEMT; millimeter-wave mixer; optoelectronic mixer; Dynamic range; Frequency; Gain; Gallium arsenide; Indium compounds; Indium gallium arsenide; Local oscillators; Millimeter wave measurements; Mixers; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Photonics, 2003. MWP 2003 Proceedings. International Topical Meeting on
Print_ISBN :
0-7803-8691-4
Type :
conf
DOI :
10.1109/MWP.2003.1422838
Filename :
1422838
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=433353
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