DocumentCode :
43362
Title :
Material Dependence of Metal Grating on SOI Photodiode for Enhanced Quantum Efficiency
Author :
Satoh, H. ; Kawakubo, Ken ; Ono, Atsushi ; Inokawa, Hiroshi
Author_Institution :
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
Volume :
25
Issue :
12
fYear :
2013
fDate :
15-Jun-13
Firstpage :
1133
Lastpage :
1136
Abstract :
Material dependence of line-and-space metal grating among gold, silver, and aluminum, is experimentally investigated for a 100-nm-thick silicon-on-insulator p-n junction photodiode in terms of enhanced light sensitivity. It is found that light sensitivity in the visible long-wavelength region is enhanced with any grating material, and the peak wavelengths, which are determined by the grating period, are not much affected by the material. The relationship between the peak wavelength and the grating period is explained theoretically. The results indicate that the grating material can be selected from these materials by taking into account the short-wavelength sensitivity and compatibility with applications.
Keywords :
Metal grating; p-n junction; photodide; silicon on insulator technology;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2260138
Filename :
6512003
Link To Document :
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