Title :
Thermal Management for High-Power Single-Frequency Tunable Diode-Pumped VECSEL Emitting in the Near- and Mid-IR
Author :
Devautour, M. ; Michon, A. ; Beaudoin, G. ; Sagnes, I. ; Cerutti, L. ; Garnache, A.
Author_Institution :
Centre Nat. de la Rech. Sci., Univ. Montpellier 2, Montpellier, France
Abstract :
We demonstrate a technological process for reducing thermal impedance of 1/2 vertical external-cavity surface-emitting semiconductor lasers (VECSEL) chips on both GaSb- and GaAs-based III-V materials for 1 and 2.3 μm emission, respectively. The structure is grown in reverse order and gold electroplated, and then the substrate is removed by wet etching. Gold allows us both to reduce the number of Bragg mirror pairs and to increase the material thermal conductivity leading to a strong reduction of thermal impedance. We then characterized the VECSEL laser emission.
Keywords :
III-V semiconductors; electroplating; infrared spectra; laser mirrors; semiconductor lasers; surface emitting lasers; thermal conductivity; thermal management (packaging); Bragg mirror; GaAs-based III-V materials; GaSb-based III-V materials; VECSEL chips; gold electroplating; high-power diode-pumping; mid-IR spectra; near-IR spectra; reverse order; semiconductor lasers; single-frequency tunable diode-pumping; size 1 mum; size 2.3 mum; thermal conductivity; thermal impedance; thermal management; vertical external-cavity surface-emitting; wet etching; Gallium arsenide; Gas lasers; Gold; Laser excitation; Mirrors; Substrates; Surface emitting lasers; Electroplated gold; GaAs; Sb; high power; semiconductor disk laser; vertical external-cavity surface-emitting semiconductor laser (VECSEL);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2245104
