DocumentCode :
43400
Title :
Carrier Dynamics and Modulation Capabilities of 1.55- 
m Quantum-Dot Lasers
Author :
Gready, D. ; Eisenstein, Gadi
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
19
Issue :
4
fYear :
2013
fDate :
July-Aug. 2013
Firstpage :
1900307
Lastpage :
1900307
Abstract :
We present a spatially resolved model for multilayer quantum-dot (QD) lasers. The detailed model incorporates the homogeneous and inhomogeneous gain broadenings. Using this model, we examined effects of various structural parameters on the modulation response. Modulation bandwidth is increased with shortening the distance from the contacts to the active area, shortening the distance between QD layers, and with increasing the number of QD layers. The number of QD layers should be carefully chosen in order to prevent a transport bottleneck. Asymmetric positioning of the QD layers with respect to the waveguide core was found to improve the modulation bandwidth.
Keywords :
laser mode locking; optical modulation; optical waveguides; quantum dot lasers; carrier dynamics; inhomogeneous gain broadenings; modulation capabilities; modulation response; multilayer quantum-dot lasers; spatially resolved model; structural parameters; transport bottleneck; waveguide core; wavelength 1.55 mum; Bandwidth; Charge carrier processes; Equations; Laser modes; Mathematical model; Modulation; Quantum dot lasers; Carrier dynamics; quantum dots (QDs); semiconductor lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2013.2238610
Filename :
6450030
Link To Document :
