DocumentCode
43400
Title
Carrier Dynamics and Modulation Capabilities of 1.55-
m Quantum-Dot Lasers
Author
Gready, D. ; Eisenstein, Gadi
Author_Institution
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume
19
Issue
4
fYear
2013
fDate
July-Aug. 2013
Firstpage
1900307
Lastpage
1900307
Abstract
We present a spatially resolved model for multilayer quantum-dot (QD) lasers. The detailed model incorporates the homogeneous and inhomogeneous gain broadenings. Using this model, we examined effects of various structural parameters on the modulation response. Modulation bandwidth is increased with shortening the distance from the contacts to the active area, shortening the distance between QD layers, and with increasing the number of QD layers. The number of QD layers should be carefully chosen in order to prevent a transport bottleneck. Asymmetric positioning of the QD layers with respect to the waveguide core was found to improve the modulation bandwidth.
Keywords
laser mode locking; optical modulation; optical waveguides; quantum dot lasers; carrier dynamics; inhomogeneous gain broadenings; modulation capabilities; modulation response; multilayer quantum-dot lasers; spatially resolved model; structural parameters; transport bottleneck; waveguide core; wavelength 1.55 mum; Bandwidth; Charge carrier processes; Equations; Laser modes; Mathematical model; Modulation; Quantum dot lasers; Carrier dynamics; quantum dots (QDs); semiconductor lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2013.2238610
Filename
6450030
Link To Document