• DocumentCode
    43400
  • Title

    Carrier Dynamics and Modulation Capabilities of 1.55- \\mu m Quantum-Dot Lasers

  • Author

    Gready, D. ; Eisenstein, Gadi

  • Author_Institution
    Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
  • Volume
    19
  • Issue
    4
  • fYear
    2013
  • fDate
    July-Aug. 2013
  • Firstpage
    1900307
  • Lastpage
    1900307
  • Abstract
    We present a spatially resolved model for multilayer quantum-dot (QD) lasers. The detailed model incorporates the homogeneous and inhomogeneous gain broadenings. Using this model, we examined effects of various structural parameters on the modulation response. Modulation bandwidth is increased with shortening the distance from the contacts to the active area, shortening the distance between QD layers, and with increasing the number of QD layers. The number of QD layers should be carefully chosen in order to prevent a transport bottleneck. Asymmetric positioning of the QD layers with respect to the waveguide core was found to improve the modulation bandwidth.
  • Keywords
    laser mode locking; optical modulation; optical waveguides; quantum dot lasers; carrier dynamics; inhomogeneous gain broadenings; modulation capabilities; modulation response; multilayer quantum-dot lasers; spatially resolved model; structural parameters; transport bottleneck; waveguide core; wavelength 1.55 mum; Bandwidth; Charge carrier processes; Equations; Laser modes; Mathematical model; Modulation; Quantum dot lasers; Carrier dynamics; quantum dots (QDs); semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2013.2238610
  • Filename
    6450030