Title :
Research of plasma CF/sub 2/Cl/sub 2//O/sub 2/ through the sensor of a emission spectral type [silicon plasma etching]
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
In this paper, research on the plasma chemical etching of silicon using the "Plasma - 600" equipment is carried out. The dependency of the current of a spectral emission type sensor on the flow of oxygen is measured. The influence on this dependency by the absorption of light by the Teflon polymer covered reactor quartz walls, and the presence of silicon in the reactor, is established. Previously unknown effects are discovered.
Keywords :
elemental semiconductors; flow measurement; light absorption; oxygen; polymers; quartz; silicon; sputter etching; O/sub 2/; Si; SiO/sub 2/; Teflon polymer covered reactor quartz walls; carbon difluoride dichloride; light absorption; oxygen flow measurement; plasma chemical etching; silicon plasma etching; spectral emission type sensor; Absorption; Chemical sensors; Current measurement; Etching; Fluid flow measurement; Inductors; Plasma applications; Plasma chemistry; Plasma measurements; Silicon;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2004. APEIE 2004. 2004 7th International Conference on Actual Problems of
Conference_Location :
Novosibirsk, Russia
Print_ISBN :
0-7803-8476-8
