Influence of the geometrical sizes of the polysilicon resistor on it gauge factor

Within the framework of a variational method and one-dimensional model the influence of the geometrical sizes of the polysilicon resistor with dielectric isolition by a layer SiO/sub 2/ on it gauge factor and distribution of deformations is consideeed. Is established, that for typical thickness of polysilicon and SiO/sub/2 at the sizes L < 10 microns begin sharp reduction appropriate components gauge factor. Near to edges of resistor there are zones of negative deformations, which in addition reduce its sensitivity