Title :
Volt-amper characteristics parameters research of the power semiconductor devices in the conditions of low conducting ability.
Author :
Bespalov, N.N. ; Trofimov, N.V.
Abstract :
The models of static and dynamic volt-amper semiconductor devices in the conditions of low conducting ability with different values of operating temperature have been elaborated. The evaluation of the approximate error of the power semiconductor devices and the demands to their measuring modes have also adduced.
Keywords :
Power generation; Power measurement; Power semiconductor devices; Power system modeling; Pulse width modulation; Pulse width modulation converters; Semiconductor device measurement; Semiconductor devices; Temperature;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 2004. APEIE 2004. 2004 7th International Conference on Actual Problems of
Conference_Location :
Novosibirsk, Russia
Print_ISBN :
0-7803-8476-8
