Title :
Phase Transformation of Monocrystalline Silicon Induced by Polishing With Diamond Abrasives
Author :
Yang Li ; Jing Lu ; Xipeng Xu
Author_Institution :
MOE Eng. Res. Center for Brittle Mater. Machining, Huaqiao Univ., Xiamen, China
Abstract :
A newly developed semi-fixed flexible polishing tool called sol-gel (SG) polishing pads can satisfy the polishing demand of silicon wafers with scratch-free and nano-roughness surface. However, an obvious damage layer emerges on the surface of monocrystalline silicon wafer after polished by SG polishing pads with diamond abrasives. In this paper, combined characterizations consist of grazing incidence X-ray diffraction, Raman spectroscopy (RS), focused ion beam-scanning electron microscopy (FIB-SEM), transmission electron microscopy (TEM), and SEM were used to observe the damage layer together with the polishing residue. The results indicated that the surface monocrystalline silicon transformed to α-Si and nano-Si. Analysis on the polishing processes under the same experimental parameters with different tools and abrasives revealed that the material removing scale about 100-300 nm may account for the generation of damage layer.
Keywords :
Raman spectra; X-ray diffraction; abrasives; diamond; elemental semiconductors; focused ion beam technology; phase transformations; polishing; scanning electron microscopy; silicon; sol-gel processing; surface roughness; transmission electron microscopy; FIB-SEM; RS; Raman spectroscopy; SG polishing pads; Si; TEM; diamond abrasives; focused ion beam-scanning electron microscopy; grazing incidence X-ray diffraction; monocrystalline silicon wafer; nano-roughness surface; phase transformation; polishing residue; scratch-free surface; semifixed flexible polishing tool; silicon wafers; sol-gel polishing pads; surface monocrystalline silicon; transmission electron microscopy; Abrasives; Diamonds; Laser beams; Scanning electron microscopy; Silicon; Surface treatment; SG polishing pads; Sol-gel (SG) polishing pads; damage layer; diamond abrasives; silicon wafer;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2015.2398511