Title :
Pattern of Near-Uniform Avalanche Breakdown in Off-Oriented 4H SiC
Author :
Konstantinov, A. ; Neyer, T.
Author_Institution :
Fairchild Semicond. Corp., Kista, Sweden
Abstract :
A streaky emission pattern was observed for near-uniform avalanche breakdown in large-area high-voltage p-n diodes in off-oriented 4H SiC. The streaks originate from unilateral expansion of microplasmas in the direction of the C-axis inclination. The unilateral expansion of avalanche plasma is attributed to anisotropy of high-field carrier transport in 4H SiC. At a high current density, the plasma streaks coalesce to form continuous plasma region over the entire area of the high-power device.
Keywords :
avalanche breakdown; current density; p-n junctions; power semiconductor diodes; silicon compounds; wide band gap semiconductors; C-axis inclination; SiC; anisotropy; avalanche plasma; continuous plasma region; high-field carrier transport; large-area high-voltage p-n diodes; microplasmas; near-uniform avalanche breakdown; off-oriented 4H SiC; plasma streaks; streaky emission pattern; Avalanche breakdown; Breakdown voltage; Electron mobility; Plasmas; Semiconductor diodes; Silicon carbide; P-n junctions; p-n junctions; power semiconductor diodes; semiconductor defects; semiconductor device breakdown; silicon carbide; silicon carbide.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2364633
