Title :
A γ effect on the power MOSFET
Author :
Lho, Young Hwan ; Kim, Ki Yup
Author_Institution :
Dept. of Digital & Commun., Woosong Univ., Daejon, South Korea
Abstract :
The electrical characteristics of solid state devices such as BJT (bipolar junction transistor) and MOSFET, etc. are altered by impinging photon radiation and temperature in the space environment In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for the two kinds of MOSFET´s (200 V and 100 V of VDSS) are tested to γ-irradiation and compared with the specifications under the pre and post irradiation of low dose rates of 4.97 and 9.55 rad/sec, and maximum total dose of 30 Krad. In our experiment, the γ radiation facility with low dose available at KAERI (Korea Atomic Energy Research Institute) has been applied on two commercially available IR (International Rectifier) products of IRFP250 and IRF540.
Keywords :
gamma-ray effects; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; γ-irradiation; BJT; IRF540; IRFP250; KAERI; Korea Atomic Energy Research Institute; bipolar junction transistor; breakdown voltage; dose rate; electrical characteristics; impinging photon radiation; international rectifier; power MOSFET; pre-post irradiation; radiation effects; solid state devices; threshold voltage; total dose; Atomic measurements; Decision support systems; Electric variables; MOSFET circuits; Power MOSFET; Rectifiers; Solid state circuits; Temperature; Testing; Threshold voltage;
Conference_Titel :
Industrial Electronics Society, 2004. IECON 2004. 30th Annual Conference of IEEE
Print_ISBN :
0-7803-8730-9
DOI :
10.1109/IECON.2004.1433400
