Magnetic susceptibility of P+N preamorphized junctions under a dc magnetic field

Different silicon P⁺N junctions prepared by the preamorphization technique have been investigated under dc magnetic field. A crystalline reference sample was equally considered. The impact of the preamorphization step on the magnetic susceptibility of the junctions is highlighted by forward and reverse current-voltage characterizations. The different measurements were performed under a dc magnetic field of intensity up to 1200 G at a sample temperature of 250 K using an Oxford Teslatron system. The relative variation of the diode current has been taken as a representative parameter of the magnetic susceptibility of the sample. The results show an increase of the magnetic susceptibility with the intensity of the magnetic field for all the samples. Nevertheless, in forward bias the magnetic susceptibility does not exceed 40% for an intensity of 1200 G and remains lower than 10% for 200 G. In reverse bias, the nitrogen preamorphized sample presents a constant susceptibility for a given intensity of magnetic field. Besides, the highest susceptibility is observed for the ambient preamorphized sample in forward bias, and for the nitrogen preamorphized sample in reverse bias. In other respects, the magnetic susceptibility has been studied as a function of the intensity of the magnetic field for a constant bias voltage in the diffusion zone of each sample. The magnetic susceptibility was proportional to B² in all cases. This result is in good agreement with the formulae given in literature.