DocumentCode :
435518
Title :
Substrate-well modeling for DSM triple-well CMOS digital circuits with adjustable VT
Author :
Ionita, Razvan ; Vladimirescu, Andrei
Author_Institution :
Inst. Superieur d´´Electron. de Paris, France
fYear :
2004
fDate :
6-8 Dec. 2004
Firstpage :
274
Lastpage :
277
Abstract :
A distributed model of the substrate well is developed in order to characterize the performance of CMOS standard-cell circuits with adjustable VT implemented in a triple-well process. This model is used to study the impact of the number of gates placed in the same well on performance and to draw conclusions for optimal design. A lumped equivalent network of the well is derived as a function of the number of gates in the well. The impact of the well contact placement and the resistance between the well contacts and the bulk of the transistors is analyzed for standard-cells on logic circuits.
Keywords :
CMOS digital integrated circuits; equivalent circuits; integrated circuit design; integrated circuit modelling; logic circuits; logic design; logic gates; lumped parameter networks; CMOS digital circuits; CMOS standard cell circuits; deep submicron triple well process; distributed model; logic circuits; logic design; logic gates; lumped equivalent network; substrate well modeling; transistors; CMOS digital integrated circuits; CMOS process; Digital circuits; Electronic mail; Isolation technology; MOS devices; Routing; SPICE; Semiconductor device modeling; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
Type :
conf
DOI :
10.1109/ICM.2004.1434265
Filename :
1434265
Link To Document :
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