• DocumentCode
    435708
  • Title

    Study on 0.1 micron grooved-gate CMOS

  • Author

    Zhang, Xiao-Ju ; Ma, Xiao-Hua ; Ren, Hong-Sia ; Hao, Yue ; Sun, Bao-Gang

  • Author_Institution
    Inst. of Microelectron., Xidian Univ., China
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    126
  • Abstract
    Grooved-gate structure metal-oxide-semiconductor (MOS) device is considered as a more promising candidate used in deep-sub-micron region for the improvement of reliability. In this paper, grooved-gate CMOS devices in the 0.1 μm regime have been studied by both experiments and simulations. Compared with the conventional planar devices, grooved-gate CMOS shows little threshold voltage roll-off, less short channel effects, but the optimization of the structure and technology is important to obtain high drive current.
  • Keywords
    CMOS integrated circuits; integrated circuit reliability; 0.1 micron; grooved-gate CMOS; high drive current; reliability improvement; short channel effects; CMOS process; CMOS technology; Doping; Etching; Fabrication; MOS devices; MOSFET circuits; Microelectronics; Oxidation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1434969
  • Filename
    1434969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435708