Random dopant induced threshold voltage fluctuations in double gate MOSFETs

Author

Xia, Ling ; Xuewen Can

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

138

Abstract

A study by means of analytical modeling and simulation analysis on random dopant induced double gate MOSFET threshold voltage fluctuations is presented. Analytical models describing the standard deviation of threshold voltage distribution associated with dopant fluctuation are derived. The effects of various double gate MOSFET design parameters, including the doping concentration, oxide thickness, silicon thickness on the threshold voltage fluctuations arc studied. The analytical models predict the general trends in threshold voltage fluctuations. The effect of dopant position fluctuation is also studied. Analytical models and simulations show that double gate MOSFET can suppress the impact of random dopant fluctuation on threshold voltage variations compared with single gate MOSFET.

Keywords

MOSFET; fluctuations; semiconductor device models; semiconductor doping; analytical modeling; dopant position fluctuation; doping concentration; double gate MOSFET; oxide thickness; random dopant fluctuation; silicon thickness; threshold voltage fluctuations; Analytical models; Doping; Fluctuations; Gallium nitride; MOSFET circuits; Microelectronics; Semiconductor process modeling; Silicon; Threshold voltage; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1434972

Filename

1434972