On the importance of gate shot noise in deep submicron RF NMOSFETs induced by gate oxide breakdown

Author

Wang, H. ; Zeng, R. ; Li, X.P.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

167

Abstract

The effect of gate oxide breakdown on the microwave noise performance of NMOSFETs is investigated. A serous degradation of microwave noise parameters induced by oxide breakdown has been observed. The degradation of the typical noise parameters in a 0.18 μm NMOSFET such as noise figure, equivalent noise resistance are characterized in the frequency range of 2 to 14 GHz. Possible degradation mechanisms are investigated by the parameter extraction using a noise equivalent circuit model.

Keywords

MOSFET; electric breakdown; equivalent circuits; microwave field effect transistors; shot noise; 0.18 micron; 2 to 14 GHz; deep submicron RF NMOSFET; degradation mechanisms; equivalent circuit model; equivalent noise resistance; gate oxide breakdown; gate shot noise; microwave noise performance; noise figure; parameter extraction; Circuit noise; Degradation; Electric breakdown; Frequency measurement; MOSFETs; Noise figure; Parameter extraction; Radio frequency; Semiconductor device noise; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1434978

Filename

1434978