DocumentCode
435731
Title
A discussion on the extension of Moore´s Law
Author
Li, Tiefu ; Li, Zhijian
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
251
Abstract
Both theory and ITRS predict that the scaling of conventional silicon CMOS is going to approach its ultimate. Several emerging devices based on different new mechanism are proposed as possible successors. But still, as classical 2-level switches, they have common limits of quantum uncertainty and thermodynamic fluctuation. In order to further enhance and improve the ability and performance of ULSI systems, either more efficient devices or processing systems with new model and architecture are required. In this article, these topics are briefly discussed in unified view of the product of device delay time and its power dissipation.
Keywords
CMOS integrated circuits; ULSI; delays; electrical conductivity transitions; integrated circuit technology; power distribution; quantum theory; silicon; thermodynamics; 2-level switches; ITRS; Moore law; ULSI systems; device delay time; power dissipation; processing systems; quantum uncertainty; silicon CMOS; thermodynamic fluctuation; Delay effects; Fluctuations; Moore´s Law; Power dissipation; Power system modeling; Silicon; Switches; Thermodynamics; Ultra large scale integration; Uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1434998
Filename
1434998
Link To Document