• DocumentCode
    435731
  • Title

    A discussion on the extension of Moore´s Law

  • Author

    Li, Tiefu ; Li, Zhijian

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    251
  • Abstract
    Both theory and ITRS predict that the scaling of conventional silicon CMOS is going to approach its ultimate. Several emerging devices based on different new mechanism are proposed as possible successors. But still, as classical 2-level switches, they have common limits of quantum uncertainty and thermodynamic fluctuation. In order to further enhance and improve the ability and performance of ULSI systems, either more efficient devices or processing systems with new model and architecture are required. In this article, these topics are briefly discussed in unified view of the product of device delay time and its power dissipation.
  • Keywords
    CMOS integrated circuits; ULSI; delays; electrical conductivity transitions; integrated circuit technology; power distribution; quantum theory; silicon; thermodynamics; 2-level switches; ITRS; Moore law; ULSI systems; device delay time; power dissipation; processing systems; quantum uncertainty; silicon CMOS; thermodynamic fluctuation; Delay effects; Fluctuations; Moore´s Law; Power dissipation; Power system modeling; Silicon; Switches; Thermodynamics; Ultra large scale integration; Uncertainty;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1434998
  • Filename
    1434998