Title :
SOI CMOS: smaller-size devices, larger-size future
Author :
Cristoloveanu, Sorin
Author_Institution :
Inst. of Microelectron. Electromagnetism & Photonics, ENSERG, Grenoble, France
Abstract :
Recent measurements and simulation data are presented in order to demonstrate the impact of the miniaturization of SOI MOSFETs. We discuss the role of each critical dimension of the transistor: channel length/width and thickness of silicon film, buried oxide and gate oxide.
Keywords :
CMOS integrated circuits; MOSFET; nanotechnology; silicon-on-insulator; SOI CMOS; SOI MOSFET; buried oxide; channel length; channel width; gate oxide; silicon film; transistor critical dimension; CMOS technology; Degradation; Dielectric thin films; Electromagnetic measurements; MOSFETs; Photonics; Positron emission tomography; Semiconductor films; Silicon on insulator technology; Transconductance;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435001
