DocumentCode
435736
Title
Fully-depleted SOI CMOS devices with W/TiN gate
Author
Lian, Juan ; Hai, Chaohe
Author_Institution
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
273
Abstract
TiN gate thin-film fully-depleted SOI CMOS devices were fabricated and discussed. Key process technologies were demonstrated. Compared with the dual polysilicon gate devices, the channel doping concentration of NMOS and PMOS can be reduced without changing the VT. This enhances the mobility. Symmetrical VT was achieved by nearly the same VT implant dose because of the near mid-gap workfunction of TiN gate.
Keywords
CMOS integrated circuits; semiconductor devices; semiconductor doping; semiconductor thin films; silicon-on-insulator; thin film circuits; titanium compounds; NMOS; PMOS; SOI CMOS devices; TiN; channel doping concentration; implant dose; mid-gap workfunction; polysilicon gate devices; thin film; Doping; Implants; MOS devices; MOSFETs; Microelectronics; Semiconductor films; Silicon; Sputter etching; Thin film devices; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435004
Filename
1435004
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