Scalability and parasitic effect of UTB SOI MOSFETs with raised S/D and sunk S/D

The short channel effects, sub-threshold swing characteristics and source/drain parasitic effects of sub-50 nm ultra-thin-body (UTB) SOI MOSFETs are studied in detail with device simulator in this paper. The simulation results indicate that the UTB devices with a body of 5 nm in thickness can be scaled well down to 20 nm node and below only if short channel effects are concerned. However, the sub-50 run UTB devices with a raised source/drain suffer from a significant parasitic source/drain resistance and gate-drain/source capacitance which kill the performance improvement from device scaling. On the other hand, the parasitic effects are minimized and thereby the excellent intrinsic performances are maintained in the sunk source/drain UTB devices even with extremely scaled dimensions.