DocumentCode
435743
Title
Abnormal off-state leakage current increasing with reduced silicon body thickness in nano-SOI devices
Author
Wang, Wenping ; Huang, Ru ; Zhang, Guoyan ; Yang, Shengqi ; Wang, Yangyuan
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
299
Abstract
A novel phenomenon is revealed in this paper, i.e. when the channel doping concentration is heavy, the off-state current doesn´t show the continuous decreasing trend with the decrease of silicon body thickness as most literatures reported. Detailed explanation was presented. Therefore, as far as LOP applications are concerned, in comparison with UTB MOSFET slightly higher channel doping and much thicker silicon body thickness can be considered as a better choice for device design.
Keywords
MOSFET; leakage currents; nanotechnology; semiconductor devices; semiconductor doping; silicon; silicon-on-insulator; LOP applications; UTB MOSFET; channel doping concentration; device design; nano-SOI devices; off-state leakage current; silicon body thickness; Doping; Electrodes; Electrons; Leakage current; MOSFET circuits; Microelectronics; Nanoscale devices; Power MOSFET; Silicon; Tiles;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435011
Filename
1435011
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