Title :
High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology
Author :
Chin, Albert ; Kao, H.L. ; Yu, D.S. ; Liao, C.C. ; Zhu, Shiyang ; Li, M.-F. ; Shiyang Zhu ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We propose and demonstrate a new VLSI structure using high performance metal-gate/high-K MOSFETs and high-Q RF passive devices on Ge-on-insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO3/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction high-K crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500° C RTA.
Keywords :
MOSFET; VLSI; electron mobility; gallium arsenide; germanium; hole mobility; ion implantation; semiconductor-insulator boundaries; silicon; 500 C; Fermi-level pinning; GOI MOSFET; GaAs; Ge-on-insulator technology; LaAlO3; RF passive devices; Si; VLSI structure; electron mobility; high-K crystallization; hole mobility; impurity diffusion; interfacial reaction; ion implantation; metal gate; Charge carrier processes; Electron mobility; Gallium arsenide; High K dielectric materials; High-K gate dielectrics; Insulation; Ion implantation; MOSFETs; Radio frequency; Very large scale integration;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435012
