Design, fabrication and characterization of a bi-directional insulated gate bipolar transistor

Author

Zhao, Shanqi ; Sin, Johnny K O ; Feng, Chuguang

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

332

Abstract

In this paper, a new bi-directional insulated-gate bipolar transistor (BIGBT) is proposed and demonstrated for the first time. The device is fabricated on a double-side polished silicon substrate using a conventional CMOS compatible IGBT technology. A double side DCB (direct bond copper) packaging method with electrodes on both sides of the BIGBT device is used. The device can block 1700V in both the forward and reverse directions. In the on-state, at a current level of 2A the forward voltage drops in the forward and reverse directions are matched within 5 %. The switching measurements show that the BIGBT also has a high degree of symmetry on the switching characteristics with the rise times and fall times of the top and bottom devices matched within approximately 10% and 14%, respectively.

Keywords

CMOS analogue integrated circuits; electrodes; electronics packaging; insulated gate bipolar transistors; silicon; substrates; 1700 V; 2 A; CMOS; IGBT technology; bi-directional insulated gate bipolar transistor; direct bond copper packaging method; electrodes; forward voltage drops; silicon substrate; switching characteristics; switching measurements; Bidirectional control; Bonding; CMOS technology; Copper; Electrodes; Fabrication; Insulated gate bipolar transistors; Insulation; Packaging; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435020

Filename

1435020